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  1. product pro?le 1.1 general description passivated high voltage, high commutation triac in a sot404 surface mounted device, plastic package. this triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dv/dt as well as high di/dt can occur. this device will commutate the full rated rms current at the maximum rated junction temperature without the aid of a snubber. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information BTA208B-1000C three-quadrant triacs high commutation rev. 01 5 december 2005 product data sheet n false trigger immunity n 1000 v, v drm guaranteed n motor control n reversible induction motors n i tsm 65 a n i t(rms) 8a n v drm 1000 v n i gt 35 ma table 1: pinning pin description simpli?ed outline symbol 1 main terminal 1 (t1) sot404 (d2pak) 2 main terminal 2 (t2) 3 gate (g) mb mounting base; main terminal 2 mb 13 2 sym051 t1 g t2
BTA208B-1000C_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 5 december 2005 2 of 12 philips semiconductors BTA208B-1000C three-quadrant triacs high commutation 3. ordering information 4. limiting values table 2: ordering information type number package name description version BTA208B-1000C d2pak plastic single-ended surface mounted package; 3 leads (one lead cropped) sot404 table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v drm repetitive peak off-state voltage - 1000 v i t(rms) rms on-state current full sine wave; t mb 102 c; see figure 4 and 5 -8a i tsm non-repetitive peak on-state current full sine wave; t j =25 c prior to surge; see figure 2 and 3 t = 20 ms - 65 a t = 16.7 ms - 71 a i 2 ti 2 t for fusing t = 10 ms - 21 a 2 s dl t /dt rate of rise of on-state current i tm = 12 a; i g = 0.2 a; di g /dt = 0.2 a/ m s - 100 a/ m s i gm peak gate current - 2 a p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature - 40 +150 c t j junction temperature - 125 c
BTA208B-1000C_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 5 december 2005 3 of 12 philips semiconductors BTA208B-1000C three-quadrant triacs high commutation a = conduction angle fig 1. total power dissipation as a function of rms on-state current; maximum values f = 50 hz fig 2. non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aab162 0 2 4 6 8 10 12 0246810 i t(rms) (a) p tot (w) a = 180 120 90 60 30 125 121 117 113 109 105 101 a a t mb(max) ( c) 003aaa968 40 20 60 80 i tsm 0 n 1 10 3 10 2 10 (a) i tsm t i t t j = 25 c max t p
BTA208B-1000C_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 5 december 2005 4 of 12 philips semiconductors BTA208B-1000C three-quadrant triacs high commutation fig 3. non-repetitive peak on-state current as a function of pulse duration; maximum values f = 50 hz; t mb 102 c fig 4. rms on-state current as a function of surge duration; maximum values fig 5. rms on-state current as a function of mounting base temperature; maximum values 003aab121 t p (ms) 10 - 2 10 2 10 10 - 1 1 10 2 10 3 i tsm (a) 10 dl t /dt limit i tsm t i t t j(init) = 25 c max t 0 5 10 15 20 25 surge duration (s) 10 - 2 10 1 10 - 1 003aaa970 i t(rms) (a) 003aab161 0 2 4 6 8 10 -50 0 50 100 150 t mb ( c) i t(rms) (a) 102 c
BTA208B-1000C_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 5 december 2005 5 of 12 philips semiconductors BTA208B-1000C three-quadrant triacs high commutation 5. thermal characteristics table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base full cycle; see figure 6 --2k/w half cycle; see figure 6 - - 2.4 k/w r th(j-a) thermal resistance from junction to ambient minimum footprint - 55 - k/w (1) unidirectional (2) bidirectional fig 6. transient thermal impedance from junction to mounting base as a function of pulse duration 001aad582 t p (s) 10 - 5 110 10 - 1 10 - 2 10 - 4 10 - 3 1 10 - 1 10 z th(j-mb) (k/w) 10 - 2 t p p t (2) (1)
BTA208B-1000C_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 5 december 2005 6 of 12 philips semiconductors BTA208B-1000C three-quadrant triacs high commutation 6. characteristics [1] device will not trigger in the t2 - g+ quadrant. table 5: characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics i gt gate trigger current v d = 12 v; i t = 0.1 a; see figure 8 [1] t2+ g+ 2 6 35 ma t2+ g - 2 1335ma t2 - g - 2 2335ma i l latching current v d = 12 v; i gt = 0.1 a; see figure 10 t2+ g+ - 25 50 ma t2+ g - - 4875ma t2 - g - - 3050ma i h holding current v d = 12 v; i gt = 0.1 a; see figure 11 - 2050ma v t on-state voltage i t = 10 a; see figure 9 - 1.3 1.65 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a; see figure 7 - 0.7 1.5 v v d = 400 v; i t = 0.1 a; t j = 125 c 0.25 0.4 - v i d off-state current v d =v drm(max) ; t j = 125 c - 0.1 0.5 ma dynamic characteristics dv d /dt rate of rise of off-state voltage v dm =67% v drm(max) ; t j = 125 c; exponential waveform; gate open circuit 1000 4000 - v/ m s di com /dt rate of change of commutating current v dm = 400 v; t j = 125 c; i t(rms) = 8 a; without snubber; gate open circuit; see figure 12 12 32 - a/ms t gt gate-controlled turn-on time i tm = 12 a; v d =v drm(max) ; i g = 0.1 a; di g /dt = 5 a/ m s -2- m s
BTA208B-1000C_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 5 december 2005 7 of 12 philips semiconductors BTA208B-1000C three-quadrant triacs high commutation (1) t2 - g - (2) t2+ g - (3) t2+ g+ fig 7. normalized gate trigger voltage as a function of junction temperature fig 8. normalized gate trigger current as a function of junction temperature v o = 1.22 v; r s = 0.04 w (1) t j = 125 c; typical values (2) t j = 125 c; maximum values (3) t j =25 c; maximum values fig 9. on-state current as a function of on-state voltage fig 10. normalized latching current as a function of junction temperature t j ( c) - 50 150 100 050 001aab101 0.8 1.2 1.6 0.4 v gt(tj) v gt(25 c) t j ( c) - 50 150 100 050 001aac669 1 2 3 0 (1) (2) (3) i gt (t j ) i gt (25 c) 003aaa971 v t (v) 03 2 1 10 15 5 20 25 i t (a) 0 (1) (2) (3) t j ( c) - 50 150 100 050 001aab100 1 2 3 0 i l(tj) i l(25 c)
BTA208B-1000C_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 5 december 2005 8 of 12 philips semiconductors BTA208B-1000C three-quadrant triacs high commutation fig 11. normalized holding current as a function of junction temperature fig 12. rate of change of commutating current as a function of junction temperature; typical and minimum values t j ( c) - 50 150 100 050 001aab099 1 2 3 0 i h(tj) i h(25 c) 003aaa973 t j ( c) 20 140 100 60 10 2 10 10 3 di com /dt 1 (a/ms) typ min
BTA208B-1000C_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 5 december 2005 9 of 12 philips semiconductors BTA208B-1000C three-quadrant triacs high commutation 7. package outline fig 13. package outline sot404 (d2pak) unit a references outline version european projection issue date iec jedec jeita mm a 1 d 1 d max. e el p h d q c 2.54 2.60 2.20 15.80 14.80 2.90 2.10 11 1.60 1.20 10.30 9.70 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 b dimensions (mm are the original dimensions) sot404 0 2.5 5 mm scale plastic single-ended surface mounted package (d2pak); 3 leads (one lead cropped) sot404 e e e b d 1 h d d q l p c a 1 a 13 2 mounting base 04-10-13 05-02-11
BTA208B-1000C_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 5 december 2005 10 of 12 philips semiconductors BTA208B-1000C three-quadrant triacs high commutation 8. revision history table 6: revision history document id release date data sheet status change notice doc. number supersedes BTA208B-1000C_1 20051205 product data sheet - - -
philips semiconductors BTA208B-1000C three-quadrant triacs high commutation BTA208B-1000C_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 5 december 2005 11 of 12 9. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 11. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 12. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 5 december 2005 document number: BTA208B-1000C_1 published in the netherlands philips semiconductors BTA208B-1000C three-quadrant triacs high commutation 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 9 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 10 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 contact information . . . . . . . . . . . . . . . . . . . . 11


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